STMicroelectronics STS13N3LLH5 N-channel Power Mosfet

Likaroloana

Mofuta	VDSS	RDS(ka)	ID
Setšoantšo sa STS13N3LLH5	30 V	<0.0066	13 A (1)

Boleng bo lekantsoe ho latela Rthj-pcb.

• RDS(ho) * Letšoao la indasteri ea Qg
• RDS(ho bulela) e tlase haholo
• Tefiso ea heke ea switjha e tlase haholo
• Maqhubu a phahameng a avalanche
• Tahlehelo ea motlakase e tlase ea heke

Lisebelisoa

• Ho fetola lits'ebetso

Tlhaloso

Sehlahisoa sena ke N-channel Power MOSFET e sebelisang moloko oa bohlano oa melao ea moralo bakeng sa theknoloji ea STripFET ™ ea thepa ea ST. RDS(on)* Qg e fumanehang ka tlase, ka har'a sephutheloana sa SO-5, e etsa hore sesebelisoa sena se lokele lits'ebetso tse batloang haholo tsa DCDC converter, moo matla a phahameng a tla fihlelleha.

Setšoantšo sa 1. Setšoantšo sa meralo ea ka hare

Letlapa la 1. Kakaretso ea sesebelisoa

Odara khoutu	Ho tshwaya	Sephutheloana	Sephutheloana
Setšoantšo sa STS13N3LLH5	13D3L	SO-8	Theipi le reel

Litekanyetso tsa motlakase

Lethathamo la 2. Litekanyetso tse phahameng ka ho fetesisa

Letšoao	Paramethara	Boleng	Yuniti
VDS	Mohloli oa metsi voltage (VGS = 0)	30	V
VGS	Heke-mohloli voltage	+ 22 / – 20	V
(1) ID	Mokelikeli oa metsi (o tsoelang pele) ho TC = 25 °C	13	A
ID (1)	Mokelikeli oa metsi (o tsoelang pele) ho TC=100 °C	8.1	A
IDM(2)	Mokelikeli oa metsi (ho phunya)	52	A
PTOT (2)	Kakaretso ea ho senya ho TC = 25 °C	2.7	W
	Derating factor	0.02	W/°C
TJ Tstg	Mocheso o sebetsang oa mateano Mocheso oa polokelo	- lilemo tse 55 ho isa ho tse 150	°C

1. Boleng bo lekantsoe ho latela Rthj-pcb.
2. Pulse bophara bo lekantsoe ke sebaka se sireletsehileng sa ts'ebetso.

Letlapa la 3. Ho hanyetsa mocheso

Letšoao	Paramethara	Boleng	Yuniti
Rthj-PCB (1)	Thermal resistance junction-pcb	46	°C/W

1. Ha e behiloe holim'a boto ea FR-4 ea 1 inch², 2 oz Cu, t <10 sec.

Letlapa la 4. Lintlha tsa Avalanche

Letšoao	Paramethara	Boleng	Yuniti
IAV	Ha se phete-pheta avalanche current, (bophara ba pulse bo lekantsoe ke Tj Max)	8.5	A
EAS	Matla a leqhubu le le leng la pulse avalanche (ho qala TJ = 25 °C, ID = IAV , VDD = 24 V)	180	mJ

Litšobotsi tsa motlakase

(TCASE=25 °C ntle le ha ho boletswe ka tsela e nngwe).

Lethathamo la 5. Linaha tsa ho tima / ho tima

Letšoao	Paramethara	Maemo a teko	Min.	Tlanya.	Max.	Yuniti
V(BR)DSS	Karohano ea mohloli oa mokelikeli voltage (VGS = 0)	ID = 250 µA	30			V
IDSS	Heke ea Zero voltagE drain current (VGS = 0)	VDS = max rating, VDS = max rating TC = 125 °C			1 10	µA µA
IGSS	Heke body leakage current (VDS = 0)	VGS = + 22 / – 20 V			±100	nA
VGS(th)	Heke threshold voltage	VDS= VGS, ID = 250 µA	1			V
RDS(e butswe)	Mohloli o tsitsitseng oa ho ntša metsi holim'a ho hanyetsa	VGS= 10 V, ID= 6.5 A VGS= 4.5 V, ID= 6.5 A		0.006 0.0052	0.0066 0.0091	W W

Letlapa la 6. Matla

Letšoao	Paramethara	Maemo a teko	Min.	Tlanya.	Max.	Yuniti
Ciss Coss Crss	Monyetla oa ho kenya Bokhoni ba tlhahiso Reverse transfer capacitance	VDS = 25 V, f=1 MHz, VGS=0	-	1500 295 39	-	pF pF
Qg	Kakaretso ea tefiso ea heke	VDD=15 V, ID = 13A		12		nC
Qgs	Tefiso ea heke-mohloli	VGS = 4.5 V	-	4	-	nC
Qgd	Tefiso ea heke-drain	(sheba setšoantšo sa 14)		4.7		nC

Lethathamo la 7. Linako tse fetohang

Letšoao	Paramethara	Maemo a teko	Min.	Tlanya.	Max.	Yuniti
td(ka) tr td(tima) tf	Laeta nako ea ho lieha Nako ea ho phahama Nako ea ho lieha ea ho tima Nako ea hoetla	VDD=15 V, ID= 6.5 A, RG=4.7 W, VGS =10 V (sheba setšoantšo sa 13)	-	9.3 14.5 22.7 4.5	-	ns ns ns ns

Letlapa la 8. Diode ea mohloli oa mohloli

Letšoao	Paramethara	Maemo a teko	Min.	Tlanya.	Max.	Yuniti
ISD	Mohloli oa khaello ea metsi		-		13	A
ke (1) SDM	Mohloli oa khatholoho ea metsi (pulsed)		-		52	A
VSD(2)	Forward on voltage	ISD = 13 A, VGS=0	-		1.1	V
trr	Khutlisa nako ea ho hlaphoheloa	ISD = 13 A,		25		ns
Qrr	Fetola tefiso ea ho hlaphoheloa	di/dt = 100 A/µs,	-	17.5		nC
IRRM	Khutlisetsa morao nakong ea ho hlaphoheloa	VDD= 25 V, Tj=150 °C		1.4		A

1. Pulse bophara bo lekantsoe ke sebaka se sireletsehileng sa ts'ebetso.
2. Pulsed: nako ea lebelo = 300μs, potoloho ea mosebetsi 1.5%.

Litšobotsi tsa motlakase (li-curve)

Lipotoloho tsa liteko

Sephutheloana sa data

Bakeng sa ho fihlela litlhoko tsa tikoloho, ST e fana ka lisebelisoa tsena maemong a fapaneng a liphutheloana tsa ECOPACK®, ho latela boemo ba bona ba ho latela tikoloho. Litlhaloso tsa ECOPACK®, litlhaloso tsa sehlopha le boemo ba sehlahisoa li fumaneha ho: www.st.com. ECOPACK ke letšoao la khoebo la ST.

Letlapa la 9. SO-8 data ea mechine

Lefifi.	mm
	Min.	Tlanya.	Max.
A			1.75
A1	0.10		0.25
A2	1.25
b	0.28		0.48
c	0.17		0.23
D	4.80	4.90	5.00
E	5.80	6.00	6.20
E1	3.80	3.90	4.00
e		1.27
h	0.25		0.50
L	0.40		1.27
L1		1.04
k	0°		8°
cc			0.10

Nalane ea ntlafatso

Lethathamo la 10. Histori ea ntlafatso ea litokomane

Letsatsi	Khatiso	Liphetoho
30-Phup-2011	1	Tokollo ea pele.

Ka kopo Bala ka Hloko

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Litokomane / Lisebelisoa

STMicroelectronics STS13N3LLH5 N-channel Power Mosfet [pdf] Buka ea Taelo STS13N3LLH5, STS13N3LLH5 N-channel Power Mosfet, N-channel Power Mosfet, Power Mosfet, Mosfet

Litšupiso

• Bukana ea Mosebelisi